PROCEDE DE LIAISON D'UN METAL ET D'UN SEMI-CONDUCTEUR

A bond between a refractory metal or semiconductor and a ductile metal and a method for making the same includes forming a layer of a refractory metal wetting agent such as titanium on the refractory metal before bonding to allow wetting of the refractory metal by the ductile metal.

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Bibliographische Detailangaben
1. Verfasser:	HAROLD FRANK WEBSTER ET DOMINIC ANTHONY CUSANO
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A bond between a refractory metal or semiconductor and a ductile metal and a method for making the same includes forming a layer of a refractory metal wetting agent such as titanium on the refractory metal before bonding to allow wetting of the refractory metal by the ductile metal.