ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING
An apparatus for atomic scale processing is provided. The apparatus comprising a reactor (100) having inner and outer surfaces; wherein at least a portion of the inner surfaces define an internal volume (156) of the reactor (100); a fixture assembly (158) positioned within the internal volume (156)...
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Format: | Patent |
Sprache: | eng ; fin |
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Zusammenfassung: | An apparatus for atomic scale processing is provided. The apparatus comprising a reactor (100) having inner and outer surfaces; wherein at least a portion of the inner surfaces define an internal volume (156) of the reactor (100); a fixture assembly (158) positioned within the internal volume (156) of the reactor (100) having a surface configured to hold a substrate within the internal volume (156) of the reactor (100); and an inductively coupled plasma source. The inductively coupled plasma source and the reactor (100) are connected at a first connection point (112). A base pressure of the reactor (100) is between approximately 10-4 and 10-2 Torr. A partial pressure of each background impurity within the internal volume (156) of the reactor (100) is below approximately 10-6 Torr to reduce said background impurities role in surface reactions before, during and after atomic scale processing. |
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