METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION

A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the fo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MANNINEN, Ilkka, KALLIOMÄKI, Jesse
Format:	Patent
Sprache:	eng ; fin ; swe
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	MANNINEN, Ilkka KALLIOMÄKI, Jesse
description	A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor. Menetelmä ohutkalvoprosessiprekursorin tunkeutumissyvyyden määrittämiseksi, joka käsittää tarjotaan insertti (100), järjestetään insertti (100) kontaktiin substraatin (200) kanssa monikollisen määrän tiloja (101) muodostamiseksi insertin (100) ja substraatin (200) väliin, ja syötetään prekursoria (prekursoreita) muodostettuihin tiloihin (101) prekursorin tunkeutumissyvyyden määrittämiseksi
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_FI20225248A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>FI20225248A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_FI20225248A13</originalsourceid><addsrcrecordid>eNqNyr0KwjAQAOAuDqK-w7kraLTgGvJjDpq7kJw4liJxEi3U90cQH8DpW755c41OAtsNIBWXBTRZ0CnprOVSwHOGlNm4UsAwSebuOyITCmekM7AHCUjgsYtgXeKCgkzLZnYfHlNd_Vw0a-_EhG0dX32dxuFWn_Xde1Q7pVp1POn94Z_zAbd6MOI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION</title><source>esp@cenet</source><creator>MANNINEN, Ilkka ; KALLIOMÄKI, Jesse</creator><creatorcontrib>MANNINEN, Ilkka ; KALLIOMÄKI, Jesse</creatorcontrib><description>A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor. Menetelmä ohutkalvoprosessiprekursorin tunkeutumissyvyyden määrittämiseksi, joka käsittää tarjotaan insertti (100), järjestetään insertti (100) kontaktiin substraatin (200) kanssa monikollisen määrän tiloja (101) muodostamiseksi insertin (100) ja substraatin (200) väliin, ja syötetään prekursoria (prekursoreita) muodostettuihin tiloihin (101) prekursorin tunkeutumissyvyyden määrittämiseksi</description><language>eng ; fin ; swe</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; METALLURGY ; PHYSICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230922&DB=EPODOC&CC=FI&NR=20225248A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230922&DB=EPODOC&CC=FI&NR=20225248A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MANNINEN, Ilkka</creatorcontrib><creatorcontrib>KALLIOMÄKI, Jesse</creatorcontrib><title>METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION</title><description>A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor. Menetelmä ohutkalvoprosessiprekursorin tunkeutumissyvyyden määrittämiseksi, joka käsittää tarjotaan insertti (100), järjestetään insertti (100) kontaktiin substraatin (200) kanssa monikollisen määrän tiloja (101) muodostamiseksi insertin (100) ja substraatin (200) väliin, ja syötetään prekursoria (prekursoreita) muodostettuihin tiloihin (101) prekursorin tunkeutumissyvyyden määrittämiseksi</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAQAOAuDqK-w7kraLTgGvJjDpq7kJw4liJxEi3U90cQH8DpW755c41OAtsNIBWXBTRZ0CnprOVSwHOGlNm4UsAwSebuOyITCmekM7AHCUjgsYtgXeKCgkzLZnYfHlNd_Vw0a-_EhG0dX32dxuFWn_Xde1Q7pVp1POn94Z_zAbd6MOI</recordid><startdate>20230922</startdate><enddate>20230922</enddate><creator>MANNINEN, Ilkka</creator><creator>KALLIOMÄKI, Jesse</creator><scope>EVB</scope></search><sort><creationdate>20230922</creationdate><title>METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION</title><author>MANNINEN, Ilkka ; KALLIOMÄKI, Jesse</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FI20225248A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fin ; swe</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MANNINEN, Ilkka</creatorcontrib><creatorcontrib>KALLIOMÄKI, Jesse</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MANNINEN, Ilkka</au><au>KALLIOMÄKI, Jesse</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION</title><date>2023-09-22</date><risdate>2023</risdate><abstract>A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor. Menetelmä ohutkalvoprosessiprekursorin tunkeutumissyvyyden määrittämiseksi, joka käsittää tarjotaan insertti (100), järjestetään insertti (100) kontaktiin substraatin (200) kanssa monikollisen määrän tiloja (101) muodostamiseksi insertin (100) ja substraatin (200) väliin, ja syötetään prekursoria (prekursoreita) muodostettuihin tiloihin (101) prekursorin tunkeutumissyvyyden määrittämiseksi</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; fin ; swe
recordid	cdi_epo_espacenet_FI20225248A1
source	esp@cenet
subjects	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
title	METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T08%3A59%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MANNINEN,%20Ilkka&rft.date=2023-09-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EFI20225248A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true