METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION

A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the fo...

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Bibliographische Detailangaben
Hauptverfasser:	MANNINEN, Ilkka, KALLIOMÄKI, Jesse
Format:	Patent
Sprache:	eng ; fin ; swe
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor. Menetelmä ohutkalvoprosessiprekursorin tunkeutumissyvyyden määrittämiseksi, joka käsittää tarjotaan insertti (100), järjestetään insertti (100) kontaktiin substraatin (200) kanssa monikollisen määrän tiloja (101) muodostamiseksi insertin (100) ja substraatin (200) väliin, ja syötetään prekursoria (prekursoreita) muodostettuihin tiloihin (101) prekursorin tunkeutumissyvyyden määrittämiseksi