Laite, joka on tarkoitettu kiteiden kasvattamiseen Czrochralskin menetelmällä, jossa kasvattamisprosessin aikana kiteitä sekä vedetään sulasta että kierretään akselin ympäri

Head (17) rotates relative to process chamber (1) containing melt. An AC source supplies energy to power-consuming elements (29, 35) in process chamber. First inductive resistor (23) is connected to the head. Second inductive resistor (24) connected to the AC source transfers electrical energy to fi...

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Bibliographische Detailangaben
Hauptverfasser:	ALTEKRUEGER,BURKHARD, BAUMECKER,TOMAS, KATZSCHNER,WERNER, SCHOLLER,JOHANN
Format:	Patent
Sprache:	fin ; swe
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Head (17) rotates relative to process chamber (1) containing melt. An AC source supplies energy to power-consuming elements (29, 35) in process chamber. First inductive resistor (23) is connected to the head. Second inductive resistor (24) connected to the AC source transfers electrical energy to first resistor. Electrical lines (27, 28) connect the first resistor to the power-consuming elements. Preferred Features: Even data is transferred via the electrical connecting lines. The rotating head has a hollow shaft (16) around which the first inductive resistor is placed, the second inductive resistor being concentric to that.