CIRCUITO INTEGRADO FOTONICO HIBRIDO Y METODO DE FABRICACION

The present invention relates to a hybrid photonic integrated circuit comprising: (a) a silicon technology photonic functional layer comprising: a silicon surface, wherein the silicon surface comprises at least one silicon pillar; a silicon oxide layer, wherein the silicon oxide layer is traversed by the at least one silicon pillar; a waveguide, and (b) a layer of a III-V semiconductor, where the III-V semiconductor layer is in contact with the at least one silicon pillar, with the silicon oxide layer, and with the guide wave, where the III-V semiconductor layer is an intact layer, and where the at least one silicon pillar functions as a heat sink. The invention also relates to a method for preparing said hybrid photonic integrated circuit, where the method is based on wet or dry etching of silicon, thermal oxidation and chemical mechanical polishing. (Machine-translation by Google Translate, not legally binding)