PRE-THERMAL TREATMENT METHOD FOR PHOTOVOLTAIC DEVICES (Machine-translation by Google Translate, not legally binding)

PRE-THERMAL TREATMENT METHOD FOR PHOTOVOLTAIC DEVICES (Machine-translation by Google Translate, not legally binding)

Pre-thermal treatment method for photovoltaic devices. A method of pre-thermal treatment for photovoltaic devices consisting of a transparent conductive substrate (2), a hole transport layer (3), an active-photo-absorbent layer (4), an electron transport layer (5), a cathode (6) and an anode (7). Th...

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Bibliographische Detailangaben
Hauptverfasser: Marsal Garví, Luis Francisco, Sánchez López, José Guadalupe, Abd Elghafar, Enas Moustafa Mohamed, Pallarès Marzal, Josep, Torimtubun, Alfonsina Abat Amelenan
Format: Patent
Sprache:eng ; spa
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Pre-thermal treatment method for photovoltaic devices. A method of pre-thermal treatment for photovoltaic devices consisting of a transparent conductive substrate (2), a hole transport layer (3), an active-photo-absorbent layer (4), an electron transport layer (5), a cathode (6) and an anode (7). The method comprises: depositing (10) the hole transport layer on the substrate and annealing at 150°C and 15 minutes; cool; dissolve (11) a solution with a mixture of photoactive polymers at 80°C and 180 minutes and filter the solution; reheating (12a) the hole transport layer at 80°C and 30 minutes and, simultaneously, maintaining (12b) the filtered solution at the same temperature and time conditions; depositing (13) the filtered solution with the mixture of active polymers on the hole transport layer, both at a temperature of 80°C; and, heating (14) the deposited layers at 90°C and 10 minutes; cool. (Machine-translation by Google Translate, not legally binding) Método de tratamiento pre-térmico para dispositivos fotovoltaicos. Se divulga un método de tratamiento pre-térmico para dispositivos fotovoltaicos formados por un substrato conductor transparente (2), una capa de transporte de huecos (3), una capa activa-foto-absorbente (4), una capa de transporte para electrones (5), un cátodo (6) y un ánodo (7). El método comprende: depositar (10) la capa de transporte de huecos sobre el substrato y recocer a 150ºC y 15 minutos; enfriar; disolver (11) una solución con una mezcla de polímeros foto-activos a 80ºC y 180 minutos y filtrar la solución; recalentar (12a) la capa de transporte de huecos a 80ºC y 30 minutos y, simultáneamente, mantener (12b) la solución filtrada a las mismas condiciones de temperatura y tiempo; depositar (13) la solución filtrada con la mezcla de los polímeros activos sobre la capa de transporte de huecos, ambas a una temperatura de 80ºC; y, calentar (14) las capas depositadas a 90ºC y 10 minutos; enfriar.