Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel
The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junc...
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creator | ESPINET GONZALEZ, PILAR BAUDRIT, MATHIEU REY-STOLLE PRADO, IGNACIO GARCIA VARA, IVÁN ALGORA DEL VALLE, CARLOS |
description | The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of a multijunction solar cell. The said method is used to circumvent the convergence problem existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_ES2466344TT4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ES2466344TT4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_ES2466344TT43</originalsourceid><addsrcrecordid>eNqNjDsOwjAQBdNQIOAOywFoiJULoCAaKtJHlr1IK9m7xh86DpSajtYXIyAOQPU00sxbNo9znbJYAfLBoUfOegZkMOJD-UCEoKMGpyGRL04bqk8GLr5OkYwGi1AYLKUgiTLdBRJ6MsK2mDzXt4Lfs4j8VUkYE-T6YnTrZnHVLuHmt6tme-yHw2mHQUZMQRtkzGN_2auua5UaBtX-47wBhJlMaQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel</title><source>esp@cenet</source><creator>ESPINET GONZALEZ, PILAR ; BAUDRIT, MATHIEU ; REY-STOLLE PRADO, IGNACIO ; GARCIA VARA, IVÁN ; ALGORA DEL VALLE, CARLOS</creator><creatorcontrib>ESPINET GONZALEZ, PILAR ; BAUDRIT, MATHIEU ; REY-STOLLE PRADO, IGNACIO ; GARCIA VARA, IVÁN ; ALGORA DEL VALLE, CARLOS</creatorcontrib><description>The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of a multijunction solar cell. The said method is used to circumvent the convergence problem existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions.</description><language>spa</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140710&DB=EPODOC&CC=ES&NR=2466344T4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140710&DB=EPODOC&CC=ES&NR=2466344T4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ESPINET GONZALEZ, PILAR</creatorcontrib><creatorcontrib>BAUDRIT, MATHIEU</creatorcontrib><creatorcontrib>REY-STOLLE PRADO, IGNACIO</creatorcontrib><creatorcontrib>GARCIA VARA, IVÁN</creatorcontrib><creatorcontrib>ALGORA DEL VALLE, CARLOS</creatorcontrib><title>Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel</title><description>The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of a multijunction solar cell. The said method is used to circumvent the convergence problem existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsOwjAQBdNQIOAOywFoiJULoCAaKtJHlr1IK9m7xh86DpSajtYXIyAOQPU00sxbNo9znbJYAfLBoUfOegZkMOJD-UCEoKMGpyGRL04bqk8GLr5OkYwGi1AYLKUgiTLdBRJ6MsK2mDzXt4Lfs4j8VUkYE-T6YnTrZnHVLuHmt6tme-yHw2mHQUZMQRtkzGN_2auua5UaBtX-47wBhJlMaQ</recordid><startdate>20140710</startdate><enddate>20140710</enddate><creator>ESPINET GONZALEZ, PILAR</creator><creator>BAUDRIT, MATHIEU</creator><creator>REY-STOLLE PRADO, IGNACIO</creator><creator>GARCIA VARA, IVÁN</creator><creator>ALGORA DEL VALLE, CARLOS</creator><scope>EVB</scope></search><sort><creationdate>20140710</creationdate><title>Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel</title><author>ESPINET GONZALEZ, PILAR ; BAUDRIT, MATHIEU ; REY-STOLLE PRADO, IGNACIO ; GARCIA VARA, IVÁN ; ALGORA DEL VALLE, CARLOS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_ES2466344TT43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>spa</language><creationdate>2014</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>ESPINET GONZALEZ, PILAR</creatorcontrib><creatorcontrib>BAUDRIT, MATHIEU</creatorcontrib><creatorcontrib>REY-STOLLE PRADO, IGNACIO</creatorcontrib><creatorcontrib>GARCIA VARA, IVÁN</creatorcontrib><creatorcontrib>ALGORA DEL VALLE, CARLOS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ESPINET GONZALEZ, PILAR</au><au>BAUDRIT, MATHIEU</au><au>REY-STOLLE PRADO, IGNACIO</au><au>GARCIA VARA, IVÁN</au><au>ALGORA DEL VALLE, CARLOS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel</title><date>2014-07-10</date><risdate>2014</risdate><abstract>The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of a multijunction solar cell. The said method is used to circumvent the convergence problem existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS |
title | Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel |
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