Método implementado en computador para la simulación numérica de un dispositivo semiconductor que comprende uniones túnel

The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junc...

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Bibliographische Detailangaben
Hauptverfasser: ESPINET GONZALEZ, PILAR, BAUDRIT, MATHIEU, REY-STOLLE PRADO, IGNACIO, GARCIA VARA, IVÁN, ALGORA DEL VALLE, CARLOS
Format: Patent
Sprache:spa
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Beschreibung
Zusammenfassung:The present invention consists in a method implemented in a computer for the numerical simulation of a semiconductor device which contains (a) tunnel junctions and allows the simulation for all the working range of the tunnel junction. The method is based on a distributed model where the tunnel junction can be integrated in the simulation by means of distributed electronic circuits of a semiconductor device and, specially, of a multijunction solar cell. The said method is used to circumvent the convergence problem existing so far and allows in particular the full description of the experimental behavior of the multijunction solar cells and, by extension, of any kind of semiconductor device containing tunnel junctions.