Production of fibers and porous sheets of indium oxide alloyed with tin oxide by means of thermal evaporation, especially using a method of bombardment with electron gun

The method is new. The method comprises bombardment with electrons of energy up to 10 KeV, with deposit velocity 35 Å/second to cause evaporation of tablet composed of 87 wt.% of In2O3 and 13 wt.% of SnO2, at temperature of glass substrate (Ts) 120-400[deg]C, base pressure 1->7> Torr and resid...

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Hauptverfasser: RUEDA SANCHEZ FERNANDO, CASTANEDA QUINTANA SAUL
Format: Patent
Sprache:eng ; spa
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Zusammenfassung:The method is new. The method comprises bombardment with electrons of energy up to 10 KeV, with deposit velocity 35 Å/second to cause evaporation of tablet composed of 87 wt.% of In2O3 and 13 wt.% of SnO2, at temperature of glass substrate (Ts) 120-400[deg]C, base pressure 1->7> Torr and residual pressure 2 X 10->6> - 10->5> Torr. Obtained films have various thicknesses, high conductivity, and chaotic and arborescent fiber growth. Increase of substrate temperature Ts results in increased size of fibers, crystallinity, adherence, conductivity, surface concentration of Sn and oxygen deficiency. Obtained deposit is resistant to thermal treatment in presence of air up to 450[deg]C. Procedure for obtaining fibres and porous sheets of indium oxide alloyed with tin oxide using thermal evaporation, notably for electron gun bombardment, consisting in performing an electron bombardment with an energy level of up to 10 KeV, at a deposition speed of 35A/min.,evaporation being carried out using a sintered wafer comprising 87% In2O3 and 13% SnO2 weight, performed at glass substrate temperatures (Ts) of 120 degrees C to 400 degrees C at a base pressure of 7> Torr and residual pressure 2 X 10->6> - 10->5> Torr. Obtained films have various thicknesses, high conductivity, and chaotic and arborescent fiber growth. Increase of substrate temperature Ts results in increased size of fibers, crystallinity, adherence, conductivity, surface concentration of Sn and oxygen deficiency. Obtained deposit is resistant to thermal treatment in presence of air up to 450[deg]C. (Machine-translation by Google Translate, not legally binding) Procedimiento para la obtención de fibras y láminas porosas del Oxido de Indio aleado con Oxido de Est