PROCEDIMIENTO DE AUTOLIMPIEZA DE UNA CAMARA DE REACTOR

EL INVENTO SE REFIERE A UN PROCESO PARA LIMPIAR UNA CAMARA DE REACTOR(12) TANTO JUNTO A LOS ELECTRODOS DE RADIOFRECUENCIA (16,92) COMO A TRAVES DE LA CAMARA Y EL SISTEMA DE SALIDA (105,109,118) HASTA, E INCLUYENDO, COMPONENTES COMO LA VALVULA DE ESTRANGULACION. PREFERENTEMENTE, SE EMPLEA UNA SECUENC...

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Hauptverfasser:	COLLINS, KENNETH STUART, LEUNG, CISSY, LAW, KAM SHING, WONG, JERRY YUEN KUI, TANG, CHING CHEONG, CHANG, MEI
Format:	Patent
Sprache:	spa
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	EL INVENTO SE REFIERE A UN PROCESO PARA LIMPIAR UNA CAMARA DE REACTOR(12) TANTO JUNTO A LOS ELECTRODOS DE RADIOFRECUENCIA (16,92) COMO A TRAVES DE LA CAMARA Y EL SISTEMA DE SALIDA (105,109,118) HASTA, E INCLUYENDO, COMPONENTES COMO LA VALVULA DE ESTRANGULACION. PREFERENTEMENTE, SE EMPLEA UNA SECUENCIA DE ATAQUE QUIMICO DE DOS FASES, LA PRIMERA DE LAS CUALES UTILIZA UNA PRESION RELATIVAMENTE ALTA Y GAS DE FLUOROCARBONO PARA LIMPIAR LA CAMARA Y EL SISTEMA DE SALIDA. LAS FASES LOCAL Y EXTENDIDA DE ATAQUE PUEDEN EMPLEARSE TANTO SEPARADA COMO CONJUNTAMENTE. The disclosure relates to a process for cleaning a reactor chamber (12) both locally adjacent the RF electrodes (16, 92) and also throughout the chamber and the exhaust system (105, 109, 118) to and including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressure and fluorocarbon gas chemistry for etching throughout the chamber and exhaust system. The local and extended etch steps may be used seperately as well as together.