Solar cell pref. of gallium arsenide

The cell, pref. of gallium arsenide, consists of a semi-conductor substrate, on which grow the layers of the active device, basically consisting of an emitter layer and a base layer. The electrical contact to the emitter is achieved over the back face of the substrate, which is connected to the emitter by means of conduction channels based on the same material and type of conductivity as the connecting regions between the channels. The channels traverse the base region. Electrical contact to the base layer is achieved frontally, covering only a very small fraction of the frontal surface of the cell. The cell, pref. of gallium arsenide, consists of a semi-conductor substrate, on which grow the layers of the active device, basically consisting of an emitter layer and a base layer. The electrical contact to the emitter is achieved over the back face of the substrate, which is connected to the emitter by means of conduction channels based on the same material and type of conductivity as the connecting regions between the channels. The channels traverse the base region. Electrical contact to the base layer is achieved frontally, covering only a very small fraction of the frontal surface of the cell. (Machine-translation by Google Translate, not legally binding) CELULA SOLAR, PREFERENTEMENTE DE ARSENIURO DE QALIO, CONSTITUIDA POR UN SUSTRATO SEMICONDUCTOR SOBRE EL QUE SE CRECEN LAS CAPAS DEL DISPOSITIVO ACTIVO, EL CUAL ESTA FUNDAMENTALMENTE COMPUESTO POR UNA CAPA DE EMISOR Y UNA CAPA DE BASE.LA CELULA DE LA INVENCION SE CARACTERIZA PORQUE EL CONTACTO ELECTRICO DEL EMISOR SE REALIZA SOBRE LA CARA POSTERIOR DEL SUSTRATO EL CUAL SE CONECTA ELECTRICAMENTE CON EL EMISOR MEDIANTE CANALES DE CONDUCCION A BASE DEL MISMO MATERIAL Y TIPO DE CONDUCTIVIDAD QUE LAS REGIONES QUE CONECTAN ENTRE SI DICHOS CANALES. LOS CANALES ATRAVIESAN LA REGION BASE. EL CONTACTO ELECTRICO DE BASE SE REALIZA FRONTALMENTE, CUBRIENDO SOLAMENTE UNA FRACCION MUY PEQUEÑA DE LA SUPERFICIE FRONTAL DE LA CELULA.