MICROELECTROMECHANICAL SENSOR DEVICE WITH WAFER-LEVEL INTEGRATION OF PRESSURE AND INERTIAL DETECTION STRUCTURES AND CORRESPONDING MANUFACTURING PROCESS

MICROELECTROMECHANICAL SENSOR DEVICE WITH WAFER-LEVEL INTEGRATION OF PRESSURE AND INERTIAL DETECTION STRUCTURES AND CORRESPONDING MANUFACTURING PROCESS

Described herein is a microelectromechanical sensor device (100), comprising: a stack (1) of a first die (2) that integrates a pressure-detection structure (4) and a second die (6) that integrates an inertial detection structure (8), the first die (2) constituting a cap for the inertial detection st...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FERRARI, Paolo, ALLEGATO, Giorgio, OGGIONI, Laura
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Beschreibung
Zusammenfassung:Described herein is a microelectromechanical sensor device (100), comprising: a stack (1) of a first die (2) that integrates a pressure-detection structure (4) and a second die (6) that integrates an inertial detection structure (8), the first die (2) constituting a cap for the inertial detection structure (8) and being bonded to the second die (6) so as to define a hermetic cavity (28, 34). The first die (2) has a first substrate (20), having a front surface (20a) and a rear surface (20b) that is bonded to said second die (6), a buried cavity (22) being buried and entirely contained in the first substrate (20) and being arranged in a position corresponding to the front surface (20a), from which it is separated by a membrane (24). In particular, the aforesaid buried cavity (22) is distinct and separate from the hermetic cavity (28, 34).