EDGE-EMITTING SEMICONDUCTOR LASER DIODE

The invention relates to an edge-emitting semiconductor laser diode comprising: - a substrate (1) having a first main face (6) and a second main face (7) opposite the first main face (6), - an epitaxial semiconductor layer stack (2) on the first main face (6) of the substrate (1), wherein the epitaxial semiconductor layer stack (2) comprises an active layer (3) for generating electromagnetic radiation, - a matching layer (4) arranged on the second main face (7) of the substrate (1), and - an absorption layer (5) applied directly to the matching layer (4) and configured to at least partially absorb the electromagnetic radiation, wherein - the substrate (1) and the matching layer (4) are transparent to electromagnetic radiation generated during operation, and - the matching layer (4) is configured to increase the absorption of electromagnetic radiation in the absorption layer (5).