SEMICONDUCTOR DEVICE AND METHOD

The present disclosure relates to a semiconductor device. The semiconductor device comprises:a substrate comprising a first wide-bandgap semiconductor material; a first region of a first conductivity type and a second region of a second conductivity type arranged above the substrate, where the first...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	MOUHOUBI, Samir
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present disclosure relates to a semiconductor device. The semiconductor device comprises:a substrate comprising a first wide-bandgap semiconductor material; a first region of a first conductivity type and a second region of a second conductivity type arranged above the substrate, where the first region and the second region comprise a second wide-bandgap semiconductor material, and where the first region and the second region form a Zener PN diode configured as an anti-fuse. A corresponding method for producing the semiconductor device is also provided.