SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE

A semiconductor die (1) with a semiconductor body (15), the semiconductor die (1) comprising a transistor device (10) comprising a source region (11) at a first side (15.1) of the semiconductor body (15), a drain region (12) at a second side (15.2) of the semiconductor body (15), a trench (25) extending from the first side (15.1) into the semiconductor body (15) and having an elongated lateral extension, a first trench electrode (30) for a channel creation or field shaping, having an elongated lateral extension (35) and disposed in the trench (25), and a control electrode contact (31) contacting the first trench electrode (30) from the first side (15.1) of the semiconductor body (15) for applying an electrical potential, the control electrode contact (31) disposed at a first lateral position (41); and a sense electrode contact (32) contacting the first trench electrode (30) from the first side (15.1) of the semiconductor body (15) for sensing a voltage from the first trench electrode (30), wherein the sense electrode contact (32) is disposed at a second lateral position (42) which is spaced from the first lateral position (41).