REDUCING DAMAGE DURING SPACER DEPOSITION

REDUCING DAMAGE DURING SPACER DEPOSITION

A semiconductor structure includes a semiconductor channel structure that has a body and a tip and a dielectric spacer adjacent to the tip. The tip is no less than 70% the thickness of the body.

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Hauptverfasser: XIE, Ruilong, GLUSCHENKOV, Oleg, JAGANNATHAN, Hemanth, FROUGIER, Julien
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator XIE, Ruilong
GLUSCHENKOV, Oleg
JAGANNATHAN, Hemanth
FROUGIER, Julien
description A semiconductor structure includes a semiconductor channel structure that has a body and a tip and a dielectric spacer adjacent to the tip. The tip is no less than 70% the thickness of the body.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title REDUCING DAMAGE DURING SPACER DEPOSITION
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