SIMULATION OF ATOMISTIC DEFECTS IN NANOELECTRONICS USING POLYHEDRAL MESHES

A simulation of an electronic device may use a distribution of atomistic defects to provide more accurate results. An input mesh may be received representing a physical structure of the electronic device. This input mesh may be transformed into a polyhedral mesh to facilitate the simulation. A distribution of defects may then be generated and distributed throughout the polyhedral mesh. When performing each time step of the simulation, the effects of these defects may be attributed to individual cells in the polyhedral mesh and incorporated into the simulation equations for each volume. For example, charge and power contributions from the defects may be incorporated into the simulation equations to more accurately model the performance of the device.