METHOD OF METALLIZATION BY A NICKEL OR COBALT ALLOY FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES

METHOD OF METALLIZATION BY A NICKEL OR COBALT ALLOY FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES

A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface, of a mineral oxide substrate with a noble metal, such as palladium, followed by...

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Bibliographische Detailangaben
Hauptverfasser: BERTHON, Hermine, Marie, LAKHDARI, Amine, THIAM, Mikailou
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface, of a mineral oxide substrate with a noble metal, such as palladium, followed by a step of depositing a nickel or cobalt alloy containing boron and at least one of phosphorus and tungsten by electroless deposition.