MEMS DEVICE WITH A CAP LAYER HAVING GAPS AND METHOD OF MANUFACTURING A MEMS DEVICE

MEMS DEVICE WITH A CAP LAYER HAVING GAPS AND METHOD OF MANUFACTURING A MEMS DEVICE

The present invention relates to A MEMS device and manufacturing method of the MEMS device. The MEMS device comprises a cap layer and a device layer. The cap layer comprises a cap wafer made of electrically insulating material. The device layer comprises at least one seismic element.The cap layer co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HANNULA, Konsta, OKSANEN, Jussi, AAV, Jussi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to A MEMS device and manufacturing method of the MEMS device. The MEMS device comprises a cap layer and a device layer. The cap layer comprises a cap wafer made of electrically insulating material. The device layer comprises at least one seismic element.The cap layer comprises at least one silicon-filled portion at a first face of the cap layer facing the device layer, and at least one of said at least one silicon-filled portion comprises a gap that locally increases distance from the cap layer to the at least one seismic element comprised in the device layer.