SENSE AMPLIFIER CIRCUIT, CORRESPONDING MEMORY DEVICE AND METHOD OF OPERATION

In a sense amplifier circuit (40) for a memory device, first (304L) and second (304R) input terminals are coupled to first (302L) and second (302R) memory sensing nodes, respectively. A comparator circuit (42) has first (402L) and second (402R) input nodes as well as first (306L) and second (306R) o...

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Bibliographische Detailangaben

Hauptverfasser:	CONTE, Antonino, LA ROSA, Francesco
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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