GAS SENSOR AND METHOD OF MANUFACTURING THE GAS SENSOR

GAS SENSOR AND METHOD OF MANUFACTURING THE GAS SENSOR

A gas sensor (100) comprising: a black silicon substrate (102) comprising silicon protrusions (104); a layer of nanostructures (106) arranged on the silicon protrusions, wherein the nanostructures are configured to interact with a predetermined substance in a gas; a first electrode (108) arranged in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: ADVAND, Marzyeh
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A gas sensor (100) comprising: a black silicon substrate (102) comprising silicon protrusions (104); a layer of nanostructures (106) arranged on the silicon protrusions, wherein the nanostructures are configured to interact with a predetermined substance in a gas; a first electrode (108) arranged in electrical connection with the black silicon substrate; and a second electrode (110) arranged above and at a distance from the nanostructures and configured to receive a field emission current being emitted by the silicon protrusions and nanostructures resulting from a voltage applied across the first and second electrodes.