POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES

Electronic device (10) comprising a semiconductor body (15) of SiC having an upper surface (15a) and a lower surface (15b) opposite to each other along a first axis (Z) and comprising: a drain substrate (16) extending into the semiconductor body (15) starting from the bottom surface (15b) and with a first electrical conductivity type; a drift layer (17) extending into the semiconductor body (15) starting from the upper surface (15a) and with the first electrical conductivity type and a second dopant concentration; a body region (19) accommodated in the drift layer (17); and a source region (20) accommodated in the body region (19). The electronic device (10) further comprises a gate structure (21) on the upper surface (15a). The gate structure (21), the source region (20), the body region (19), the drift layer (17) and the drain substrate (16) form a first MOSFET portion (10'a) of a first MOSFET (10'). The semiconductor body (15) further comprises at least one doped pocket region (25) which is buried in the drift layer (17), has a second electrical conductivity type and is aligned along the first axis (Z) with the source region (20) and/or with the gate structure (21).