TRENCH JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A MESA REGION

A trench junction field effect transistor, trench JFET (100), is proposed. The trench JFET (100) includes a mesa region (103) confined by first and second trenches (1061, 1062) along a first lateral direction (x1). The first and second trenches (1061, 1062) extending into a semiconductor body (102) from a first surface (108) of the semiconductor body (102). The trench JFET (100) further includes a mesa channel region (104) of a first conductivity type confined, along the first lateral direction (x1), by first and second control regions (1101, 1102) of a second conductivity type. A first pn junction (1121) is defined by the mesa channel region (104) and the first control region (1101). A second pn junction (1122) is defined by the mesa channel region (104) and the second control region (1102). The first control region (1101) is electrically coupled to a source contact (S), and the second control region (1102) is electrically coupled to a gate contact (G).