MEMS DEVICE AND FABRICATION PROCESS WITH REDUCED Z-AXIS STICTION

MEMS DEVICE AND FABRICATION PROCESS WITH REDUCED Z-AXIS STICTION

A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having an inertial transducer element formed in a multi-layer semiconductor structure, where the first inertial transducer element comprises a first monocrystalline semiconductor proof mass element and a seco...

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Bibliographische Detailangaben
Hauptverfasser: McKillop, John Slaton, Liu, Lianjun
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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Beschreibung
Zusammenfassung:A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having an inertial transducer element formed in a multi-layer semiconductor structure, where the first inertial transducer element comprises a first monocrystalline semiconductor proof mass element and a second conductive electrode element separated from one another by an air sensing gap, and where at least a first sensing gap surface of the first monocrystalline semiconductor proof mass element is a first rough surface that has been selectively etched to reduce stiction between the first monocrystalline semiconductor proof mass element and the second conductive electrode element.