SUSPENDED GATE FET FOR CHEMICAL OR BIOLOGICAL APPLICATIONS

A suspended gate field effect transistor (10) comprises a semiconductor substrate (12) having a channel region (14) between a first contact region (16-1) and a second contact region (16-2), a membrane structure (20), which spans over the channel region (14) and provides a vacuity (23) with the oppos...

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Bibliographische Detailangaben
Hauptverfasser: KRAVCHENKO, Andrey, SELBMANN, Franz, ZICKNER, Marieke, JOSEPH, Yvonne, KOMENKO, Vladislav
Format: Patent
Sprache:eng ; fre ; ger
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