SUSPENDED GATE FET FOR CHEMICAL OR BIOLOGICAL APPLICATIONS
A suspended gate field effect transistor (10) comprises a semiconductor substrate (12) having a channel region (14) between a first contact region (16-1) and a second contact region (16-2), a membrane structure (20), which spans over the channel region (14) and provides a vacuity (23) with the oppos...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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