SUSPENDED GATE FET FOR CHEMICAL OR BIOLOGICAL APPLICATIONS

A suspended gate field effect transistor (10) comprises a semiconductor substrate (12) having a channel region (14) between a first contact region (16-1) and a second contact region (16-2), a membrane structure (20), which spans over the channel region (14) and provides a vacuity (23) with the opposing semiconductor substrate (12) over the channel region (14), wherein the membrane structure (20) forms a suspended gate electrode of the field effect transistor and has at least one displaceable gate region (20-1), and a sensitive layer (22), which comprises a material for interacting with a component (24-A) of an analyte (24), wherein the sensitive layer (22) is arranged on the membrane structure (20) so that an interaction of the material of the sensitive layer (22) with the component (24-A) of the analyte (24) results in a stress induced deformation of the sensitive layer (22) and in a deflection (Δx) of the displaceable gate region (20-1) of the membrane structure (20) due to the stress induced deformation of the sensitive layer (22).