FABRICATING A SILICON CARBIDE AND NITRIDE STRUCTURES ON A CARRIER SUBSTRATE

A method, apparatus, and system for forming a semiconductor structure. A first oxide layer (402, 912) located on a set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312) formed on a silicon carbide substrate (100, 1003) is bonded to a first oxide layer (504, 1002) located on a carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) to form an oxide layer (600, 1100, 1312, 1604, 1804, 2004, 2104, 2204, 2304) located between the carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312). The silicon carbide substrate (100, 1003) has a doped layer (106, 904, 1302). The silicon carbide substrate (100, 1003) having the doped layer (106, 904, 1302) is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer (106, 904, 1302) is such that the doped layer (106, 904, 1302) is removed and a silicon carbide layer in the silicon carbide substrate (100, 1003) remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312).