FILM FORMATION METHOD

The present disclosure provides a film formation method having an excellent mass productivity.In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.

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Bibliographische Detailangaben
Hauptverfasser:	Makoto, Shimizu, Naoyuki, Tsukamoto, Hiroshi, Shiho, Yuji, Kato, Hiroyuki, Ando
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present disclosure provides a film formation method having an excellent mass productivity.In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.