INORGANIC SILYL AND POLYSILYL DERIVATIVES OF GROUP V ELEMENTS AND METHODS OF SYNTHESIZING THE SAME AND METHODS OF USING THE SAME FOR DEPOSITION

Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3- mA(SiaH2a+1)m, (SiR3)3- n-pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a 1 to 6; b = 1 to 6: c =1 to 6: a≠ b≠ c; m = 1 t...

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Bibliographische Detailangaben
Hauptverfasser:	GIRARD, Jean-Marc, ZHANG, Peng, LI, Feng
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR3)3- mA(SiaH2a+1)m, (SiR3)3- n-pA(SiaH2a+1)n(SibH2b+1)p or A(SiaH2a+1)(SibH2b+1)(SicH2c+1) wherein a 1 to 6; b = 1 to 6: c =1 to 6: a≠ b≠ c; m = 1 to 3; n = 1 to 2, p = 1 to 2, n + p = 2 to 3; A = As, P, Sb, Bi; and R is selected from a C1 to C10 linear, branched or cyclic alkyl, alkenyl, alky ny I group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.