SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductor structure includes a substrate including a first surface (12A) and a second surface (12B) opposite to each other, and a unit region (R1) and a terminal region (R2) adjacent to each other. An electrode structure (50) in the substrate extends from the first surface toward the second su...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHUANG, Chiao-Shun, KUO, TaChuan
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure includes a substrate including a first surface (12A) and a second surface (12B) opposite to each other, and a unit region (R1) and a terminal region (R2) adjacent to each other. An electrode structure (50) in the substrate extends from the first surface toward the second surface in the unit region. A trench structure (60) in the substrate extends from the first surface toward the second surface in the unit region and adjoins the terminal region. The trench structure includes a semiconductor material layer (162) extending to the first surface. A capacitive structure on the first surface of the substrate in the terminal region adjoins the trench structure. The capacitive structure has a material the same as the semiconductor material layer, and has a capacitive electrode (163) connected to the semiconductor material layer. A method for manufacturing the semiconductor structure is also provided.