WAFER LIFT PIN AND SIC FILM-COATED GLASSY CARBON MATERIAL

A wafer lift pin that is inserted in an insertion hole of a susceptor in a semiconductor production apparatus so as to be movable in a vertical direction and is used for lifting a silicon wafer placed on the susceptor includes: a rod-shaped base material made from glassy carbon; and an SiC film that is formed by a CVD method and coats a surface of the base material, wherein at least a sliding portion with an inner side of the insertion hole of the susceptor is coated with the SiC film; when the surface of the SiC film is observed with a scanning electron microscope, the surface of the wafer lift pin in an observation visual field is entirely coated with SiC particles, and a ratio of an observed area of small SiC particles having a particle diameter of 2.00 µm or smaller to a total area coated with the SiC film in the observation visual field is 50% or more; and a portion abutting against the silicon wafer is not coated with the SiC film. According to the present invention, there can be provided a wafer lift pin in which the cracking of the SiC film originating in the difference in the coefficient of thermal expansion between the SiC film and the glassy carbon resists occurring when the formed SiC film is cooled.