GATE STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE

GATE STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE

A gate structure (99) may include a first conductive pattern (60), a second conductive pattern (80) on the first conductive pattern and including polysilicon doped with impurities, and a gate insulation pattern (45) on sidewalls of the first and second conductive patterns. A capping layer (70) inclu...

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Bibliographische Detailangaben
Hauptverfasser: NOH, Hyojung, JEONG, Eulji, YANG, Minwoo, LYU, Sungnam, LEE, Byounghoon
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A gate structure (99) may include a first conductive pattern (60), a second conductive pattern (80) on the first conductive pattern and including polysilicon doped with impurities, and a gate insulation pattern (45) on sidewalls of the first and second conductive patterns. A capping layer (70) including a semiconductor material or an insulating material may be disposed under the first conductive pattern. The first conductive pattern may include metal grains (65). At least one of the metal grains may extend from an upper surface of the capping layer to a lower surface of the second conductive pattern, and may contact the upper surface of the capping layer and the lower surface of the second conductive pattern.