HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY

HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY

An approach provides a metal-insulator-metal capacitor with a comb-like structure. The metal-insulator-metal capacitor includes a first electrode material forming a central, vertical portion of the first electrode metal and two sets of stacked horizontal portions of the first electrode metal. An ins...

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Bibliographische Detailangaben
Hauptverfasser: XIE, Ruilong, BASKER, Veeraraghavan, FROUGIER, Julien, GAUL, Andrew
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An approach provides a metal-insulator-metal capacitor with a comb-like structure. The metal-insulator-metal capacitor includes a first electrode material forming a central, vertical portion of the first electrode metal and two sets of stacked horizontal portions of the first electrode metal. An insulator material surrounds the first electrode metal and exposes a top surface of the central, vertical portion of the first electrode metal. The metal-insulator-metal capacitor includes a second electrode material surrounding the insulator material. The metal-insulator-metal capacitor includes a first electrode contact connecting to the top surface of the central, vertical portion of the first electrode metal and a second electrode contact connecting to a top surface of the second electrode material.