INTEGRATED ELECTRONIC DEVICE WITH AN IMPROVED CONDUCTIVE CONTACT STRUCTURE AND RELATED MANUFACTURING PROCESS

Integrated electronic device (1) including: a semiconductor body (2) of silicon delimited by a front surface (S8) and including at least a first semiconductive region (41,42) of a first conductivity type, which extends into the semiconductor body (2) starting from the front surface (S8), and a second semiconductive region (40,48) of a second conductivity type, which extends below the first semiconductive region (41,42); a dielectric capping region (15); a trench (39) which extends through the dielectric capping region (15) and through a front portion of the semiconductor body (2), in such a way that a part of the first semiconductive region (41,42) laterally faces the trench (39), said trench (39) partly extending inside the second semiconductive region (40,48); a conductive contact structure (50) extending into the trench (39) and including: a coating region (54,56,58) of titanium silicide, which coats the bottom of the trench (39), in contact with the second semiconductive region (41,42), and also laterally coats the part of the first semiconductive region (41,42) laterally facing the trench (39); and an inner conductive region (72).