NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

A non-volatile memory device includes a peripheral circuit structure and a cell array structure on the peripheral circuit structure, where the cell array structure includes a base insulation layer, a common source line layer on the base insulation layer, a buffer insulation layer on the common sourc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN, Jeehoon, BAEK, Jaebok, YUN, Janggn, PARK, Kyeonghoon
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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