SEMICONDUCTOR DIE WITH A VERTICAL DEVICE
The disclosure relates to a semiconductor die (1) with a semiconductor body (2), the semiconductor die (1) comprising a vertical transistor device (10) formed in a first area (11) of the semiconductor body (2), the vertical transistor device (10) comprising a source region (15) at a first side (2.1)...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The disclosure relates to a semiconductor die (1) with a semiconductor body (2), the semiconductor die (1) comprising a vertical transistor device (10) formed in a first area (11) of the semiconductor body (2), the vertical transistor device (10) comprising a source region (15) at a first side (2.1) of the semiconductor body (2), and a drain region (16) at a second side (2.2) of the semiconductor body (2); a first electrical isolation (40) between the first area (11) and a second area (12) of the semiconductor body (2); and a diode (50) in the second area (12) of the semiconductor body (2); wherein a cathode contact (62) of the diode (50) is electrically connected to the source region (15) of the vertical transistor device (10). |
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