METHOD OF MANUFACTURING A SENSOR DEVICE

A method of manufacturing a sensor device(100) comprises forming (200) a substrate (102) comprising a sensor element followed by forming (202) a cap layer (104). The cap layer (104) is then bonded (204) to the substrate (102) before the substrate (102) is thinned (206). A via is formed (210) between...

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Bibliographische Detailangaben
Hauptverfasser:	GLEESON, Rachel, BUYDENS, Luc
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method of manufacturing a sensor device(100) comprises forming (200) a substrate (102) comprising a sensor element followed by forming (202) a cap layer (104). The cap layer (104) is then bonded (204) to the substrate (102) before the substrate (102) is thinned (206). A via is formed (210) between the sensor element and a back side of the thinned substrate (102). An electrical connection is provided between the sensor element and the back side of the thinned substrate (102). A mask is formed (208) on the cap layer (104) to define an area about a predetermined window region (108) before forming (210) of the via. A portion of the cap layer (104) about the predetermined window region (108) of the cap layer (104) is removed (212) after formation (210) of the via.