SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

The disclosure relates to a semiconductor die (1) comprising a vertical transistor device (10) having a gate electrode (11) in a gate trench (12), and a MOS gated diode MGD (20) having an MGD gate electrode (21) in an MGD trench (22), wherein the gate trench (12) of the transistor device (10) has an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FEIL, Thomas Martin, MARAK, Arnold, WUTTE, Britta
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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