SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

The disclosure relates to a semiconductor die (1) comprising a vertical transistor device (10) having a gate electrode (11) in a gate trench (12), and a MOS gated diode MGD (20) having an MGD gate electrode (21) in an MGD trench (22), wherein the gate trench (12) of the transistor device (10) has an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FEIL, Thomas Martin, MARAK, Arnold, WUTTE, Britta
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The disclosure relates to a semiconductor die (1) comprising a vertical transistor device (10) having a gate electrode (11) in a gate trench (12), and a MOS gated diode MGD (20) having an MGD gate electrode (21) in an MGD trench (22), wherein the gate trench (12) of the transistor device (10) has an elongated extension in a first lateral direction (31), and wherein the transistor device (10) and the MOS gated diode (20) are arranged consecutive in the first lateral direction (31).