CRYSTALLINE OXIDE THIN FILM, METHOD FOR PRODUCING SAME, THIN FILM TRANSISTOR, AND METHOD FOR PRODUCING SAME

Provided is a crystalline oxide thin film including In as a main component, wherein 50% or more of Fourier transform images obtained by subjecting each of lattice images in a plurality of image regions extracted from a transmission electron microscope (TEM) image of a cross-section of the crystallin...

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Bibliographische Detailangaben
Hauptverfasser:	INOUE, Kazuyoshi, YAMAGUCHI, Koji, KAWASHIMA, Emi, TSURUMA, Yuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a crystalline oxide thin film including In as a main component, wherein 50% or more of Fourier transform images obtained by subjecting each of lattice images in a plurality of image regions extracted from a transmission electron microscope (TEM) image of a cross-section of the crystalline oxide thin film to two-dimensional Fourier transform (FFT) processing exhibit any one of plane orientations selected from (100), (110), (111), (211), (411), (125), (210), (310), and (320).