POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME

POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME

A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle di...

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Hauptverfasser: HONG, SEUNG CHUL, HAN, DEOK SU, KIM, HWAN CHUL, PARK, HAN TEO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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creator HONG, SEUNG CHUL
HAN, DEOK SU
KIM, HWAN CHUL
PARK, HAN TEO
description A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4417661A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4417661A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4417661A13</originalsourceid><addsrcrecordid>eNqNi8sKwjAQRbNxIeo_zA90USx1HZOpCZhM6EzWpZS4Ei3U_8cHgltXl3M4d62mRGfPzscTGAqJ2IunCB31wBi8oWizkRelngwyg44WAooj-4l-dw2cjyy9FoTMbyMOgXXArVpdxutSdt_dKOhQjKvKfB_KMo9TuZXHgKlp6kPb1rre_5E8Ae7DNCU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME</title><source>esp@cenet</source><creator>HONG, SEUNG CHUL ; HAN, DEOK SU ; KIM, HWAN CHUL ; PARK, HAN TEO</creator><creatorcontrib>HONG, SEUNG CHUL ; HAN, DEOK SU ; KIM, HWAN CHUL ; PARK, HAN TEO</creatorcontrib><description>A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SKI WAXES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240821&amp;DB=EPODOC&amp;CC=EP&amp;NR=4417661A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240821&amp;DB=EPODOC&amp;CC=EP&amp;NR=4417661A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HONG, SEUNG CHUL</creatorcontrib><creatorcontrib>HAN, DEOK SU</creatorcontrib><creatorcontrib>KIM, HWAN CHUL</creatorcontrib><creatorcontrib>PARK, HAN TEO</creatorcontrib><title>POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME</title><description>A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.</description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi8sKwjAQRbNxIeo_zA90USx1HZOpCZhM6EzWpZS4Ei3U_8cHgltXl3M4d62mRGfPzscTGAqJ2IunCB31wBi8oWizkRelngwyg44WAooj-4l-dw2cjyy9FoTMbyMOgXXArVpdxutSdt_dKOhQjKvKfB_KMo9TuZXHgKlp6kPb1rre_5E8Ae7DNCU</recordid><startdate>20240821</startdate><enddate>20240821</enddate><creator>HONG, SEUNG CHUL</creator><creator>HAN, DEOK SU</creator><creator>KIM, HWAN CHUL</creator><creator>PARK, HAN TEO</creator><scope>EVB</scope></search><sort><creationdate>20240821</creationdate><title>POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME</title><author>HONG, SEUNG CHUL ; HAN, DEOK SU ; KIM, HWAN CHUL ; PARK, HAN TEO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4417661A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>HONG, SEUNG CHUL</creatorcontrib><creatorcontrib>HAN, DEOK SU</creatorcontrib><creatorcontrib>KIM, HWAN CHUL</creatorcontrib><creatorcontrib>PARK, HAN TEO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HONG, SEUNG CHUL</au><au>HAN, DEOK SU</au><au>KIM, HWAN CHUL</au><au>PARK, HAN TEO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME</title><date>2024-08-21</date><risdate>2024</risdate><abstract>A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.</abstract><oa>free_for_read</oa></addata></record>
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subjects ADHESIVES
CHEMISTRY
DYES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
title POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T03%3A57%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HONG,%20SEUNG%20CHUL&rft.date=2024-08-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4417661A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true