POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME

POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME

A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle di...

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Bibliographische Detailangaben
Hauptverfasser: HONG, SEUNG CHUL, HAN, DEOK SU, KIM, HWAN CHUL, PARK, HAN TEO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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Beschreibung
Zusammenfassung:A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds=MPS2−D102In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.