METHOD FOR FORMING HETEROEPITAXIAL FILM
The present invention is a method for producing a heteroepitaxial film, including heteroepitaxial growing a 3C-SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, a first step of removing a native o...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The present invention is a method for producing a heteroepitaxial film, including heteroepitaxial growing a 3C-SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, a first step of removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, a second step of performing nucleation of SiC at 1333 Pa or lower and 300°C or higher and 950°C or lower and a third step of forming the 3C-SiC single crystal film and forming a vacancy directly under the 3C-SiC single crystal film at 1333 Pa or lower and 800°C or higher and lower than 1200°C, while supplying a source gas containing carbon and silicon; and a fourth step of producing the heteroepitaxial film by delaminating the 3C-SiC single crystal film along the vacancy. This provides the method for efficiently obtaining the heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss. |
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