SILICON CARBIDE POWER MOSFET DEVICE HAVING IMPROVED PERFORMANCES AND MANUFACTURING PROCESS THEREOF

MOSFET device (50) of a vertical conduction type having a substrate (55) of silicon carbide having a first conductivity type and a main face (55A). A body region (60), of a second conductivity type, extends into the substrate (55), from the main face, and has a first depth along a first direction (Z...

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Hauptverfasser: SAGGIO, Mario Giuseppe, SCALIA, Laura Letizia, GUARNERA, Alfio, CAMALLERI, Cateno Marco
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:MOSFET device (50) of a vertical conduction type having a substrate (55) of silicon carbide having a first conductivity type and a main face (55A). A body region (60), of a second conductivity type, extends into the substrate (55), from the main face, and has a first depth along a first direction (Z). A first and a second source region (65) of the first conductivity type extend inside the body region (60), starting from the main face, parallel to each other, have a second depth, along the first direction (Z), smaller than the first depth and are mutually spaced by a distance, in a second direction (X), perpendicular to the first direction (Z). A body contact region (80), of the second conductivity type, extends inside the body region (60), between the first and the second source regions (65), and has a third depth, along the first direction, greater than or equal to the second depth (Z). The body contact region (80) has a width, in the second direction (X) and a length, in the extension direction (Y) of the source regions, much greater than its width.