GAAS WAFER, GAAS WAFER GROUP, AND METHOD FOR PRODUCING GAAS INGOT

GAAS WAFER, GAAS WAFER GROUP, AND METHOD FOR PRODUCING GAAS INGOT

Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0 × 1017 cm-3 or more and less than 1.1 × 1018...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0 × 1017 cm-3 or more and less than 1.1 × 1018 cm-3; an indium concentration of 3.0 × 1018 cm-3 or more and less than 3.0 × 1019 cm-3; a boron concentration of 2.5 × 1018 cm-3 or more; a carrier concentration of 1.0 × 1016 cm-3 or more and 4.0 × 1017 cm-3 or less; and a proportion of the area of a region with zero dislocation density to the wafer surface of 91.0% or more.