METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE, AND PEELING AND DISSOLVING COMPOSITION

Provided are a method for cleaning a semiconductor substrate that can cleanly remove (clean) an adhesive layer obtained using, for example, a siloxane-based adhesive from a semiconductor substrate having the adhesive layer on a surface thereof in a shorter time by a simple operation, a method for ma...

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Bibliographische Detailangaben
Hauptverfasser: OKUNO, Takahisa, SHINJO, Tetsuya, YAGYU, Masafumi
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Provided are a method for cleaning a semiconductor substrate that can cleanly remove (clean) an adhesive layer obtained using, for example, a siloxane-based adhesive from a semiconductor substrate having the adhesive layer on a surface thereof in a shorter time by a simple operation, a method for manufacturing a processed semiconductor substrate including such a cleaning method, and a composition used in such a cleaning method.A method for cleaning a semiconductor substrate includes a step of peeling and dissolving an adhesive layer formed on a semiconductor substrate using a peeling and dissolving composition, in which the peeling and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L):        L1-L3-L2     (L)(in the formula, L1 and L2 each independently represent an alkyl group having 2 to 5 carbon atoms, and L3 represents O or S).