SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SIC INGOT PRODUCED BY GROWING SAID SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND SIC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SIC WAFER AND SAID SIC WAFER WITH EPITAXIAL FILM

SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SIC INGOT PRODUCED BY GROWING SAID SIC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND SIC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SIC WAFER AND SAID SIC WAFER WITH EPITAXIAL FILM

An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KANEKO, Tadaaki, KOJIMA, Kiyoshi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.