LIGHT-EMITTING DIODE FOR PRODUCING WHITE LIGHT
A light-emitting diode according to one embodiment of the present disclosure comprises: a first conductive semiconductor layer; an active area comprising a plurality of active layers; a pre-strained layer disposed between the first conductive semiconductor layer and the active area, and comprising a...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A light-emitting diode according to one embodiment of the present disclosure comprises: a first conductive semiconductor layer; an active area comprising a plurality of active layers; a pre-strained layer disposed between the first conductive semiconductor layer and the active area, and comprising a V-pit generation layer (VGL); and a second conductive semiconductor layer disposed on the active area, wherein the VGL has a thickness in the range of 250nm to 350nm. |
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