FABRICATION OF NORMAL CONDUCTING OR LOW-GAP ISLANDS FOR DOWNCONVERSION OF PAIR-BREAKING PHONONS IN SUPERCONDUCTING QUANTUM CIRCUITS

FABRICATION OF NORMAL CONDUCTING OR LOW-GAP ISLANDS FOR DOWNCONVERSION OF PAIR-BREAKING PHONONS IN SUPERCONDUCTING QUANTUM CIRCUITS

Disclosed herein is a quantum processor comprising a substrate, a qubit structure formed on the substrate, an electroplated phonon downconversion material, and furrows through the electroplated phonon downconversion material forming a plurality of electroplated phonon downconversion islands coupled...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MCDERMOTT, Robert, PLOURDE, Britton
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed herein is a quantum processor comprising a substrate, a qubit structure formed on the substrate, an electroplated phonon downconversion material, and furrows through the electroplated phonon downconversion material forming a plurality of electroplated phonon downconversion islands coupled to the substrate configured to channel deposited energy away from the qubit structure. Also disclosed are methods of making and using the same.